Sr Application Engineer, EDA

About the role

Qorvo supplies innovative semiconductor solutions across consumer electronics, smart home/IoT, automotive, EVs, network infrastructure, healthcare, and aerospace/defense. The company is seeking a Senior EDA Applications Engineer with hands‑on GaN and/or GaAs RF Power Amplifier (PA) design experience to define, deploy, and support next‑generation 5G NR and 6G PA and RF Front‑End Module (FEM) development. This hybrid role combines senior PA design responsibilities with ownership of EDA methodology, ensuring flows are grounded in real design and correlation challenges from architecture definition through high‑volume manufacturing.

Responsibilities

• Directly support the design of high‑efficiency, high‑linearity GaN and/or GaAs PAs and RF FEMs for 5G NR/6G, validating and continuously improving EDA methodology.
• Lead or support integration of PA dies into multi‑chip modules (MCM), optimizing flows for size, cost, and thermal performance.
• Provide day‑to‑day applications support for PA, RFIC, analog, mixed‑signal, and digital design teams using industry‑standard EDA tools (Cadence Virtuoso/Spectre, Keysight ADS, Ansys HFSS, Synopsys HSPICE/PrimeSim/VCS, Xcelium, AWR, or equivalents).
• Develop, qualify, and deploy RF/PA design flows spanning circuit‑level simulation (ADS) and 3D electromagnetic simulation (HFSS), ensuring model‑silicon consistency for GaN/GaAs technologies.
• Evaluate, benchmark, and deploy new EDA capabilities for custom RF/analog design, AMS simulation, and digital verification, prioritizing real PA design and correlation challenges.
• Partner with EDA vendors to resolve technical issues, influence tool roadmaps, and pilot new capabilities relevant to GaN/GaAs RF design.
• Build reference design flows, PDK enablement, reusable automation, and documented best practices across RF, analog, AMS, and digital methodologies.
• Deliver hands‑on training, documentation, and mentoring to raise designer proficiency; present methodology and design results to internal and external stakeholders.

Required Qualifications

• Bachelor’s degree in Electrical Engineering with 5+ years of industry experience in hands‑on GaN and/or GaAs RF Power Amplifier design, or an advanced degree with equivalent experience.
• Proven track record designing PAs/FEMs using GaN and/or GaAs (HBT, HEMT, or related) technologies for cellular, 5G NR, 6G, or other high‑frequency applications.
• Strong understanding of RF fundamentals, including S‑parameters, impedance matching, stability, and linearity.
• Extensive hands‑on experience with ADS, HFSS, and Cadence for RF circuit and EM design.
• Solid background in RF measurement and characterization, with ability to correlate simulated models to measured silicon performance.
• Demonstrated ability to translate hands‑on design experience into scalable methodology, flows, and best practices for a broader design organization.
• Excellent technical communication and presentation skills; ability to work independently in a fast‑paced environment.

Preferred Qualifications

• Experience defining or deploying enterprise‑wide EDA design flows and methodology across multiple design teams.
• Knowledge of EM, package, thermal, and multi‑physics simulation for RF front‑end modules.
• Direct experience collaborating with EDA vendors on tool qualification and roadmap development.
• Experience carrying a PA or FEM design through the transition to high‑volume manufacturing.
• Working knowledge of Synopsys HSPICE/PrimeSim/VCS or Xcelium.

Location

Opportunities available in Texas (TX), Florida (FL), Massachusetts (MA), or Colorado (CO).

Compensation

Competitive base salary commensurate with experience: $100,700 – $131,000 (subject to change dependent on physical location). Base compensation is one element of Qorvo’s Total Rewards package.

Additional Requirements

This position requires access to ITAR/EAR technologies. Applicants must be a U.S. Person (U.S. citizen, permanent resident, asylee, or refugee) or eligible to obtain the necessary export authorizations.