Postdoctoral Researcher – Molecular Beam Epitaxy of Ultra-Wide Bandgap Oxide and Nitride Materials

About the Role

A Postdoctoral Researcher position is available in the Materials Science Center, in the area of thin film synthesis of nitride and oxide materials using Plasma-Assisted Molecular Beam Epitaxy. The position would involve synthesis and characterization of oxide and nitride materials for electronic applications using molecular beam epitaxy system with radio-frequency plasma sources. Particular emphasis will be placed on the growth, doping, and characterization of electronic-grade ultra-wide bandgap semiconductors. The position would support both basic research projects and applied development projects on ultra-wide bandgap oxide materials including both gallium oxide, group III nitrides, and other emerging oxides and nitrides. Possible device applications include radio-frequency transistors, power diodes, radiation detectors, sensors for extreme environments, and other semiconductor devices.

Responsibilities

• Synthesis and characterization of oxide and nitride materials using Plasma-Assisted Molecular Beam Epitaxy
• Growth, doping, and characterization of electronic-grade ultra-wide bandgap semiconductors
• Stewardship of recently acquired deposition and characterization equipment
• Maintaining existing experimental facilities
• Development and modification of data analysis software

Basic Qualifications

• Recent PhD graduate within the last three years
• Must meet educational requirements prior to employment start date

Required Qualifications

• Solid experience operating a plasma-assisted molecular beam epitaxy tool
• Hands-on ability to maintain complex vacuum deposition equipment
• Prior background in oxides or nitride materials research, or other relevant materials systems
• Some experience with semiconductor materials or electronic devices
• Established track record in scientific writing, presentation, publishing, and communication

Preferred Qualifications

• Prior direct experience with cleanroom-based semiconductor device fabrication, with emphasis placed on ultra-wide bandgap materials and their associated devices
• Prior direct experience with material development for one of the device application areas above
• Prior experience (e.g., intern) in an industrial or laboratory R&D setting, design of experiments
• In-depth knowledge on one or several materials characterization methods, such as diffraction, spectroscopy, microscopy, material property measurements
• Active computer skills in programing (e.g. LabView, C/Igor Pro, Python, Matlab, etc.), statistical data analysis, and/or software development
• Mentorship experience with undergraduate or graduate students
• Strong motivation, ability to work on collaborative projects, ability to balance different types of tasks

Pay

Annual Salary Range: $76,600 - $126,400 (based on full-time 40 hours per week)

Benefits

• Medical, dental, and vision insurance
• Short-term disability insurance
• Pension benefits
• 403(b) Employee Savings Plan with employer match
• Life and accidental death and dismemberment (AD&D) insurance
• Personal time off (PTO) and sick leave
• Paid holidays

Schedule

40 hours per week. The postdoc appointment is for up to 3 years total, reviewed and extended annually based on program needs, funding availability and performance.