Postdoctoral Researcher – Ultra-wide Bandgap Power Electronic Device Fabrication

About the role

The National Laboratory of the Rockies (NLR) is seeking a postdoctoral researcher specializing in ultra-wide bandgap (UWBG) power electronic device fabrication. This position is part of the Materials, Chemical, and Computational Sciences Directorate.

Responsibilities

• Device design using physics-based software packages (TCAD)
• Epitaxial material synthesis
• Device fabrication in a clean room environment
• Device characterization

Requirements

• Recent PhD graduate within the last three years
• Hands-on experience in fabrication, characterization, and design of semiconductor devices in a cleanroom environment
• Experience with epitaxial growth of ultra-wide bandgap semiconductors, such as molecular beam epitaxy or metal-organic chemical vapor deposition
• Experience with gallium oxide or aluminum gallium nitride materials and power devices, and their dielectric passivation and electric field management
• In-depth knowledge on one or several materials characterization methods, such as diffraction, spectroscopy, microscopy, material property measurements
• Prior experience using physics-based software packages (such as TCAD) to design semiconductor devices
• Active computer skills in programming (e.g. LabView, C/Igor Pro, Python, Matlab, etc.), statistical data analysis, and/or software development
• Strong self-motivation, multitasking capability, time-management skills, and track record in scientific communication
• Mentorship experience with undergraduate or graduate students
• Prior experience (e.g., intern) in an industrial or national laboratory R&D setting

Qualifications

• Demonstrated prior hands-on experience in fabrication, characterization, and design of semiconductor devices in a cleanroom environment
• Track record in wide band gap semiconductor applications such as power electronics, light emitting diodes, RF transistors, photodetectors, etc

Skills

• Physics-based software packages (TCAD)
• Epitaxial growth of ultra-wide bandgap semiconductors
• Gallium oxide or aluminum gallium nitride materials and power devices
• Materials characterization methods
• Programming skills (LabView, C/Igor Pro, Python, Matlab, etc.)
• Data analysis and software development skills
• Scientific communication and mentorship experience
• Industrial or national laboratory R&D experience

Benefits

• Medical, dental, and vision insurance
• Short-term disability insurance
• Pension benefits
• 403(b) Employee Savings Plan with employer match
• Life and accidental death and dismemberment (AD&D) insurance
• Personal time off (PTO) and sick leave
• Paid holidays
• Performance-, merit-, and achievement-based awards
• Relocation expense reimbursement (eligibility varies)

Pay

$76,600 - $126,400 annually

Schedule

Full-time, 40 hours per week