Postdoctoral Appointee- Compound Semiconductor Molecular Beam Epitaxy, Onsite

What Your Job Will Be Like

We have an exciting opportunity for a postdoctoral appointee to join our compound semiconductor microelectronics research and development team. We work in a highly collaborative teaming environment to conduct III-V compound semiconductor research and development using molecular beam epitaxy and microfabrication processes for a wide variety of optoelectronic and microelectronic devices with direct, relevant impact to our national security mission. This position provides the opportunity to develop device designs, translate them into epitaxial structures, and evaluate device characteristics. This work will span III-V materials from phosphides to mixed arsenide-antimonides, with application to devices from established GaAs-based microelectronics to novel InP- and GaSb-based optoelectronics.

Responsibilities

• Material or device characterization
• Device simulation
• Device fabrication process development
• Epitaxial growth
• Interpretation of test data to enhance device performance
• Reporting results through internal and external publications and presentations
• Interfacing with stakeholders and customers to understand and meet requirements and develop new business opportunities

Qualifications We Require

• PhD conferred in the last 5 years, in Electrical Engineering, Applied Physics, or related discipline
• Background in the development of microelectronic or optoelectronic devices
• Record of publication and innovation, as evidenced by peer-reviewed journals and external presentations at appropriate scientific conferences
• Ability to obtain and maintain a DOE L security clearance

Qualifications We Desire

• Excellent academic credentials
• Background in III-V materials
• Experience with molecular beam epitaxy
• Experience with simulation of microelectronic or optoelectronic heterostructures
• Experience with fabrication or test of microelectronic or optoelectronic devices
• Evidence of dedication to laboratory safety

About Our Team

The III-V Microelectronics Department is responsible for the research and technology foundation of Group III-V compound semiconductors within the MESA: Microsystems Engineering, Science and Applications Center that enables the creation, development and delivery of microelectronic components addressing high-performance, harsh-environment communication, sensing and control problems. We work throughout the Technology Readiness Level range from TRL1 (basic principles observed and reported) to TRL6 (representative of the deliverable demonstrated in relevant environments), and partner as appropriate to assure the delivery of qualified products to our customers. Our Department focuses on providing customers with microtechnology or microsystems integration solutions to their problems, who need a trusted partner or supplier to create and deliver on stated performance, size, weight, power and cost benefits relative to alternatives. Meeting project milestones and delivery commitments are critical to success in our business. Core Department capabilities include electronic modeling and simulation; epitaxial design, growth and characterization; rad-hard microelectronic device and circuit design, microfabrication, characterization, and reliability; and high-reliability microelectronic product design, characterization, and delivery for high-consequence system applications.