MTS/Sr. MTS Engineer – Discrete Power FET Technology Development

About the role

We are seeking a talented and motivated Member of Technical Staff (MTS) or Senior Member of Technical Staff (SMTS) Engineer to join our team and drive the development of next-generation discrete power FET technologies. This role offers high technical ownership, cross-functional visibility, and the opportunity to directly shape onsemi’s future power device roadmap.

Responsibilities

• Lead technology development for onsemi’s advanced nodes of discrete power FETs, owning device architecture from concept definition through qualification and high-volume manufacturing.
• Define electrical targets and device structures, collaborating with design, process integration, and modeling teams to optimize Rds(on), switching performance, ruggedness, and power density.
• Conduct or direct TCAD, electro-thermal, and compact modeling simulations to predict performance, parasitics, and reliability behavior.
• Partner with process module owners in the fab to optimize process windows, ensure device robustness, and resolve integration challenges.
• Perform device characterization, electrical testing, and failure analysis, ensuring compliance with specifications and customer requirements.
• Drive structured root-cause analysis (DOE, 6-sigma, SPC, FMEA) for yield, reliability, or device-related issues, and implement sustainable corrective actions.
• Collaborate with systems engineering, product engineering, packaging, and applications teams to integrate power FETs into system-level solutions and end-customer applications.
• Monitor industry trends and emerging device concepts in power MOSFET, superjunction, and wide-bandgap (SiC/GaN) technologies.
• Generate invention disclosures, patents, and technical reports to strengthen onsemi’s IP portfolio and documentation standards.
• Provide technical guidance, coaching, and mentorship to junior engineers; matrix-manage engineers across multiple organizations.
• Present technical content in executive-level reviews and represent the team in cross-functional and customer-facing discussions.

Report directly to the Sr. Director of Technology Development.

Requirements

• PhD, Master’s, or Bachelor's degree in Electrical Engineering, Materials Science, Physics, or a related field.
• Proven experience in semiconductor device design and development, specifically with discrete power FETs (trench MOSFETs, superjunction, or related structures).
• Experience with post wafer fab operations such as Back-Grind/Back Metallization, Packaging, Dicing and Singulation, module construction.
• Experience with wafer level testing, ILT/WAT/PCM and Probe.
• Familiarity with package level Final Testing especially for discrete power devices.
• Experience taking technologies from development stage, through optimization and qualification and into volume ramp.
• Strong understanding of semiconductor physics, device reliability, and fabrication processes, including experience in 300mm fabrication.
• Demonstrated ability to translate high-level objectives into actionable engineering plans and drive projects independently.
• Strong data-driven problem-solving skills using DOE, statistical analysis, SPC, 6-sigma, and FMEA methodologies.
• Proficiency with TCAD, SPICE, and relevant simulation tools; experience in electro-thermal and parasitic modeling preferred.
• Track record of leading or significantly contributing to technology development projects with measurable impact on performance, reliability, yield, or cost.
• Excellent communication skills with the ability to present complex technical topics clearly to both engineering and executive audiences.
• Ability to manage multiple projects simultaneously in a fast-paced development environment.

Preferred Skills

• Experience with high-voltage and high-current power device applications.
• Knowledge of automotive AEC-Q101 reliability testing, including HTGB, HTRB, power cycling, UIS, SOA, and mission-profile testing.
• Familiarity with wide-bandgap (SiC/GaN) devices, electro-thermal coupling, ruggedness physics, and advanced packaging (DFN, TO-leadframe, copper clip, modules).
• Hands-on experience with design rules, device layout, and design environments.
• Strong background in statistical analysis and data tools (JMP, Python, MATLAB).
• Understanding of industry standards, safety, and regulatory requirements for power electronics.

Pay

The base salary range for this position is $147,000 to $250,000 exclusive of fringe benefits or potential bonuses. The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members.

Benefits

We offer a competitive benefits package. More details can be found in the onsemi Benefits Summary.