Jobs · Quality Assurance · Oregon

Foundry Device Engineer

H1BConnect · Hillsboro, OR · 1 wk ago
Quality Assurance$162k–$318k/yrFull-time

About the role

The CMOS Device Technologist will join the Manufacturing Development and Customer Engineering (MDCE) team at Intel Foundry, focusing on developing and customizing semiconductor technologies for high-volume manufacturing. This role involves collaboration with technology development and manufacturing teams to ensure innovative solutions meet customer needs. The position supports a variety of applications, including high-performance computing and mobile technologies. Successful candidates will work in a dynamic environment, contributing to advancements in device performance and efficiency.

Requirements

  • Master’s degree in electrical engineering, physics, or related field of study with 5+ years of experience in CMOS device engineering.
  • Experience in CMOS device technology, preferably in a foundry environment.
  • Knowledge of CMOS device physics and fabrication of advanced transistor device architectures.
  • Proficiency in data analysis, scripting, and data analytic techniques.

Responsibilities

  • Collaborate with the Technology Development team to develop new device technologies.
  • Partner with manufacturing teams to refine fabrication processes that meet device specifications.
  • Develop CMOS logic device technologies for various market applications.
  • Drive the implementation of customized semiconductor device technologies.
  • Leverage data analysis and analytical techniques to resolve manufacturing challenges.
  • Contribute to design of experiments and engineering data analysis to address yield and performance issues.

Benefits

  • Competitive pay
  • Stock programs
  • Healthcare coverage
  • Retirement plans
  • Paid time off
  • Parental leave
  • Programs supporting employee wellbeing and professional development

Location: Hillsboro, OR; Santa Clara, CA; Phoenix, AZ
Type: Full-time
Posted: 8/20/2026
Compensation: $161,550 – $317,600 per year

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