Epitaxy Growth Engineer

About the role

Join Teledyne Imaging Sensors as an Epitaxy Growth Engineer! We are the world’s leading provider of infrared sensors for space, with customers like NASA, ESA, and the US Department of Defense.

Responsibilities

• MBE growth production and characterization of HgCdTe wafers for the production of high performance infrared focal plane arrays and detectors.
• MBE tool ownership from tool use planning, tool maintenance and repair, growth structure design, recipe writing, wafer growth, post growth wafer characterization and correlation of MBE growth results with final device performance.
• Innovate new growth and characterization techniques for continual process improvements for yield enhancement and increased wafer throughput.

Requirements

• Hands-on expertise with MBE growth of semiconductors is required.
• Hands-on experience in MBE tool maintenance and repair, with a desire to be hands-on in the laboratory working with the technical team maintaining and operating an MBE tool.
• Background in opto-electronic semiconductor devices, optics, electronics, software, cryogenics, radiometric, and modelling, test, and analysis methods.
• Excellent verbal and written communication skills.
• PhD or MS degree in Engineering, Physics, or related field.
• Five plus (5+) years of related hands-on work experience in III-V or II-VI semiconductor MBE growth and characterization of semiconductor materials (direct HgCdTe experience is preferred).
• Experience modeling infrared detector performance and correlating detector performance to MBE growth and device processing parameters.
• Prior experience in MBE growth in a production setting, with a track record of successful production execution is desirable.

Qualifications

• US Citizenship due to access restrictions.

Skills

• MBE growth of semiconductors
• MBE tool maintenance and repair
• Growth structure design
• Recipe writing
• Wafer growth
• Post growth wafer characterization
• Correlation of MBE growth results with final device performance
• Innovate new growth and characterization techniques
• Modeling infrared detector performance
• Correlating detector performance to MBE growth and device processing parameters
• Experience in III-V or II-VI semiconductor MBE growth and characterization of semiconductor materials (direct HgCdTe experience preferred)
• Experience in a production setting with a track record of successful production execution

Benefits

• Competitive Salary & Benefits Package
• Health, Dental, Vision, and Life Insurance from Day 1
• Paid Vacation, Sick Time, and Holidays
• 401(k) with Company Match
• Employee Stock Purchase Plan
• Tuition Reimbursement
• Fun Employee Events throughout the year

Pay

Average salary range: $90,800.00 - $121,100.00

Schedule

Full-time

Benefits

• Health, Dental, Vision, and Life Insurance from Day 1
• Paid Vacation, Sick Time, and Holidays
• 401(k) with Company Match
• Employee Stock Purchase Plan
• Tuition Reimbursement
• Fun Employee Events throughout the year