Device Development Engineer

Responsibilities

The candidate will be responsible for the development and optimization of semiconductor lasers and other III-V semiconductor devices within Tower’s manufacturing facilities. The role encompasses first principles simulation of devices, development and optimization of epitaxial growth techniques, process integration to build such devices within Tower fabs, and test and analysis of the resulting devices.

Requirements

• Have a PhD in semiconductor optics or a related field and/or at least 5 years of experience in a similar role at another company
• Practical knowledge of III-V epitaxial reactor growth concerns (MOCVD or MBE)
• In-depth knowledge and experience with developing III-V semiconductor processing steps and integration
• Expert-level understanding of the outputs and figures of merit for lasers and other III-V devices
• Optical and electrical characterization experience of III-V devices (lasers, amplifiers, modulators, transistors)
• Experience with troubleshooting and improving yield for such devices in a manufacturing environment
• Hands-on experience with heterogeneous integration of III-V devices with silicon devices (photonics, BiCMOS, power)
• Basic understanding of primary reliability failure modes for III-V devices (especially lasers)
• Experience in a volume foundry manufacturing environment

Pay

Compensation: $160,000 - $220,000