Device Engineer

Manufacturing Development and Customer Engineering (MDCE) serves as the bridge between advanced technology development and practical, scalable manufacturing, ensuring that innovative solutions can be successfully produced and delivered to foundry customers.

About the role

As a device technologist, you will develop and customize technologies for high-volume manufacturing, focusing on general-purpose logic CMOS technologies to support a broad spectrum of products and markets, including high-performance compute, mobile, mixed-signal, memory controllers, and other diverse applications. You will collaborate with a team of engineers to push the boundaries of device performance, power efficiency, and scaling, contributing to the advancement of Intel Foundry's semiconductor solutions.

Responsibilities

• Collaborate with the Technology Development team to develop new device technology and customize newly developed device architectures to customer needs.
• Collaborate with the manufacturing team to develop and refine fabrication processes that meet device specifications and yield targets.
• Develop CMOS logic device technologies supporting high-performance compute, mobile, mixed-signal, memory controllers, and other broad market applications.
• Drive the development and implementation of customized semiconductor device technologies, ensuring compatibility with Intel's existing manufacturing processes and platforms.

Requirements

• Master's Degree in Electrical Engineering, Physics, or related field of study with 7+ years of experience in CMOS device engineering.
• Experience in advanced CMOS device technology, preferably in a foundry environment.
• Expertise in CMOS device physics and fabrication of advanced transistor device architectures.
• Skills in data analysis, scripting, and data analytic techniques to accelerate learning.
• Technical problem-solving and communication skills, with the capacity to convey complex technical concepts effectively.
• Capacity to work collaboratively in a globally diverse, cross-disciplinary team to develop innovative device solutions on an aggressive schedule.
• Desire to learn, lead, and influence cross-functional teams.

Qualifications

Preferred Qualifications:

• Ph.D. Degree in Electrical Engineering, Physics, or related field of study with 5+ years of experience in CMOS device engineering.
• Hands-on experience in advanced node semiconductor technology device development.
• Experience in the generation and analysis of device parametric data, design of experiment (DOE) principles, and engineering data analysis tools.
• Proficiency in device data analysis for identifying and resolving process and manufacturing challenges.
• Demonstrated track record of delivering results in a fast-paced environment.
• Experience working in 3nm-16nm FinFETs and sub 3nm GAA FETs.
• Experience in a High-Volume Manufacturing environment.

Benefits

We offer a total compensation package that ranks among the best in the industry. It consists of competitive pay, stock bonuses, and benefit programs which include health, retirement, and vacation.

Pay

Annual Salary Range for jobs which could be performed in the US: $161,550.00 - 228,070.00 USD. The range reflects the minimum and maximum target compensation for the position across all US locations. Within the range, individual pay is determined by work location and additional factors, including job-related skills, experience, and relevant education or training.

Schedule

This role is eligible for our hybrid work model, which allows employees to split their time between working on-site at their assigned Intel site and off-site.