Sr. Staff GaN Device Design Engineer

About the role

Design GaN HEMT transistors for power conversion applications. Perform analytical analysis of designs through TCAD or other methods as needed. Work with foundries to evaluate, design, and qualify products meeting yield, performance, and quality metrics. Direct and perform layouts and T/O procedures. Characterize and benchmark designs with competitors. Analyze electrical characterization data with statistical software, write reports, and present results. Work closely with the product engineering teams to define test, reliability, and qualification requirements.

Qualifications

• MS degree in Electrical Engineering required, PhD preferred
• 3+ years GaN design experience
• Strong knowledge of industry qualification standards such as JEDEC, AEC-Q101, and AQG 324
• Hands-on experience in device layout, testing, and fabrication methods
• Thorough understanding of high voltage GaN HEMT physics and layout techniques
• Understand characterization methods of HV GaN devices (switching, dynamic-Ron, etc.)
• Excellent written reporting and presentation skills