Research Principal RF MMIC Designer
Qorvo, Inc. · Richardson, TX · 1 mo ago
Analyst$148k–$193k/yrFull-time
About the role
Seeking a talented RF MMIC Design researcher to drive cutting-edge MMIC innovation within Qorvo's Advanced Research Group. This role blends deep theoretical research with advanced fabrication access and high-impact applications in defense, satellite communications, and next-generation wireless systems. Perfect for ambitious early-to-mid career researchers who want to publish, present, and explore advanced designs in leading-edge RF/microwave technologies.
Key Roles & Responsibilities
- Technical lead role for RF/MMIC architecture and design research.
- Serve as a technical lead for MMIC-based product development, creating innovative, high-performance GaN and GaAs (plus advanced silicon) circuits.
- Design, simulate, layout, and characterize advanced MMICs including power amplifiers, LNAs, phase shifters, switches, attenuators, multifunction circuits, and integration with BAW and SAW filters.
- Perform detailed nonlinear modeling, 2.5D/3D EM co-simulation, and circuit optimization using ADS, HFSS, Cadence, and similar tools.
- Build and validate prototypes in state-of-the-art microwave labs, including S-parameter, noise, load-pull, and thermal measurements.
- Execute data analysis and present results to the internal and/or external customer.
- Contribute to technology road-mapping, novel circuit architectures, and heterogeneous integration concepts.
- Mentor junior engineers and collaborate with cross-functional R&D teams.
- Submit invention disclosures for potential patents where applicable.
Required Technical Skills & Experience
- Recent and relevant experience designing III-V microwave/millimeter-wave RF/MMIC amplifiers, switches, phase shifters, attenuators, time-delay units (TDUs), hybrid multichip modules, or transmit/receive front-end modules (FEMs).
- Experience in advanced III-V compound semiconductor technologies, especially GaN, GaAs, and RF Silicon processes.
- Expert-level understanding of device transistor behavioral characteristics.
- Expert-level user of either ADS or Microwave Office (MWO) nonlinear simulators; and one or more of the following 2.5D or 3D EM simulation tools: SONNET, Axiem, Momentum, or HFSS.
- Strong understanding of microwave measurements and calibration methods: S-parameters, power, efficiency, source/load pull, noise figure, linearity, and intermodulation distortion.
- Strong written and oral communication skills with the ability to concisely summarize highly technical concepts.
Desired Experiences
- Design of high-performance millimeter wave GaAs or GaN MMIC power amplifiers with simultaneous power, bandwidth, efficiency, and linearity requirements.
- SiGe and/or CMOS-based RFIC/MMIC, analog, and mixed signal design experience is a plus.
- Published author in technical journals and/or magazines.
- Strong ability to meet customer technical needs and schedules.
Required Education & Experience
- BS Electrical Engineering with 12 or more years of experience
- MS Electrical Engineering with 9 or more years of experience
- PhD Electrical Engineering (with RF/Microwave focus) with 7 or more years of experience
Work Location
Dallas, TX (preferred), alternatives locations: San Jose, CA, Boston, MA
Relocation Eligible
Yes
Competitive base salary commensurate with experience
$148,100 - $192,500 (subject to change dependent on physical location)