Postdoctoral Research Associate - 2D Materials & Devices

About the role

The CFN is seeking a talented Postdoctoral Research Associate to conduct novel research investigating 2D material heterostructures for developing steep-slope transistors for energy-efficient microelectronics applications as a part of a DOE Microelectronics Science and Research Center (MSRC) project.

Responsibilities

• Develop, fabricate, and characterize 2D heterostructures applicable to steep-slope electrical devices based on state-of-the-art 2D materials such as 2D TMDCs and graphene.
• Perform in-depth materials characterization on 2D materials, and electrically characterize the fabricated 2D devices, especially their transistor characteristics, as a function of temperature and the materials characteristics.
• Explore new materials, device structure & physics, and patterning methods for improving the performance of 2D steep-slope devices.
• Perform integration and nanofabrication of 2D-3D and 2D-membrane semiconductor heterostructures using the materials provided by the external MSRC project team members.
• Collaborate with scientific staff with diverse backgrounds including materials science, nanofabrication, and device fabrication and physics.
• Disseminate research findings via paper publications and external presentations.

Requirements

• Ph.D. in a relevant discipline (Materials Science, Physics, Electrical Engineering, or a related engineering discipline), conferred within the past five years or to be completed prior to the starting date.
• Demonstrated experimental expertise in 2D material heterostructure device fabrication and electrical characterization under various temperatures, including 2D materials mechanical exfoliation/transfer and low-temperature measurements using a cryostat, as well as associated materials and device physics.
• Demonstrated experimental experience in nanofabrication processes (e.g., electron-beam lithography, physical vapor deposition, atomic layer deposition etc.) and electrical device data analysis including transistor characteristics.

Qualifications

• Communicate effectively, verbally and in writing, evidenced by peer-reviewed publications and conference presentations/proceedings.
• Commitment to creative and independent research, teamwork, and fostering an environment of safe scientific work practices.
• Commitment to cultivating an inclusive and respectful workplace environment.

Skills

• Hands-on experimental experience with 2D materials and heterostructure fabrication utilizing manual and/or automated 2D materials transfer and stacking systems.
• Experience in fabricating and electrically characterizing 2D materials devices beyond transistors and basic electrical measurements, such as memristors for neuromorphic computing applications and pulse-based electrical measurements.
• Experience or working knowledge of the synthesis of 2D materials and membrane semiconductors via remote epitaxy.
• Experience in materials characterization and analysis relevant for 2D materials, including but not limited to photoluminescence, Raman scattering, scanning probe microscopy, ultrafast optical spectroscopy, and X-ray photoelectron spectroscopy (XPS).
• Experience in optimizing 2D materials device performance via engineering materials and device physics, including contact engineering.

Benefits

Brookhaven National Laboratory is committed to providing fair, equitable and competitive compensation. The full salary range for this position is $71900 - $82400 / year. Salary offers will be commensurate with the final candidate’s qualification, education and experience and considered with the internal peer group.

Pay

$71900 - $82400 / year

Schedule

N/A