Position: Ph.D. Position in Multimodal Scanning Probe Microscopy for Ultrawide Bandgap Semiconductors

Fabrication & Processing

The Fabrication & Processing effort focuses on creating novel UWBG heterointerfaces through advanced growth, doping, and processing strategies.

Characterization

The Characterization effort pioneers scanning probe microscopy methods to probe UWBG materials at the nanoscale.

AI-Driven Modeling

The AI-Driven Modeling effort develops material-aware AI models to accelerate understanding and design of UWBG heterostructures.

This research is supported through the NSF Centers of Research Excellence in Science and Technology (CREST) program, which strengthens institutional research capacity, and the Engineering Research Centers program, which fosters university–industry partnerships to drive innovation and workforce development with global impact.

Sponsored by the National Science Foundation Award Number: 2514718 2025 – 2030