Full-Time MTS DRAM Device Engineer

About the role

Lead DRAM Device Engineer responsible for device development, characterization, and yield improvement to support next-generation DRAM technologies.

Responsibilities

• Lead device activities and serve as the main technical contact for engineering initiatives
• Drive device characterization, electrical data analysis, and issue segmentation to enhance yield, performance, and quality
• Support new node introductions, technology transfers, and fab ramp activities through root-cause analysis and corrective actions
• Provide technical guidance across teams to resolve manufacturing challenges
• Mentor engineers and promote best practices in device analysis and data-driven problem solving

Qualifications & Skills

• M.S. or Ph.D. in Electrical or Materials Engineering or related field
• Experience with node introductions, yield ramps, and technology transfer activities
• Strong knowledge of semiconductor device physics, characterization, and electrical data analysis
• Proficiency in statistical analysis and data-driven problem-solving
• Ability to lead technical discussions and collaborate across teams

Preferred Skills

• Hands-on experience with memory technologies such as DRAM, NAND, or NOR
• Understanding of memory architecture and margin bin analysis
• Experience leading initiatives or mentoring engineers
• Knowledge of AI tools and data analytics in manufacturing