Development of Semiconductor Lasers for Absorption Spectroscopy

About the role

The Advanced Microfabrication and Optoelectronics Group at JPL is seeking a postdoctoral candidate to design, fabricate, and characterize advanced semiconductor lasers for spectroscopy and LIDAR applications.

Responsibilities

• Work within a small team developing laser diodes in the 2.0-3.0 micron range and low power consumption quantum cascade laser in the 4.0-10.0 micron wavelength.
• Design, fabricate, and characterize advanced semiconductor lasers for application in spectroscopy and LIDAR.
• Focus on infrared quantum cascade laser design, fabrication, and single mode semiconductor lasers.

Requirements

• Knowledge and experience in infrared quantum cascade laser design, fabrication, including knowledge and experience in the fabrication of single mode semiconductor lasers.
• Experience with low power consumption room temperature 4-10 micron quantum cascade lasers.
• Experience with extremely stable frequency, narrow line width optically or electrically pumped semiconductor lasers in the 2.0-3.0 um wavelength.

Qualifications

• Doctoral degree in relevant field.

Skills

• Strong background in semiconductor physics and device engineering.
• Experience with optical and electrical characterization techniques.
• Ability to work independently and as part of a team.

Benefits

• One- to three-year fellowship.
• Opportunity to engage in ongoing NASA research projects.
• Competitive salary and benefits package.

Pay

• Salary is commensurate with experience.

Schedule

• Full-time position.

Benefits

• Health insurance.
• Retirement plan.
• Professional development opportunities.

Benefits

• Flexible working hours.
• Professional development opportunities.

Application Deadline

11/1/2026 6:00:59 PM Eastern Time Zone

Contact Information

Point of Contact: Mikeala

Email: npp@orau.org

Advisors: Siamak Forouhar (818) 393-5023, shouleh.nikzad@jpl.nasa.gov (818) 354-7496