SiC Power Device Research Scientist – MVHV Design

About the role

You will lead device development projects for next-generation silicon carbide (SiC) power devices with an emphasis on High Voltage Bipolar Devices. You will participate in all aspects of silicon carbide power device development, focusing on device design efforts.

Responsibilities

• Lead device development efforts in high performance SiC power switching devices
• Participate in device concept development activities in various SiC device structures, including SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors
• Explore new device concepts for future High Voltage / Medium Voltage SiC power devices
• Perform Design of Experiment (DoE) activities for performance optimization of High Voltage SiC power devices
• Provide optimum device designs with considerations to manufacturability and reliability
• Hands on characterization experimental devices
• Data analysis of experimental data
• Interact with teams in power electronics applications, fab process development, reliability, and modeling, and deliver device designs with optimal characteristics for target applications
• Prepare technical presentations and papers for internal meetings, as well as conferences and journals

Qualifications

• Ph.D. in Electrical Engineering, Solid State Physics, or closely related area
• 5 – 10 years of industrial experience in high voltage silicon bipolar power device development preferred
• Strong understanding in semiconductor device physics
• Experience in hands-on characterization of power semiconductor devices
• Working knowledge of commercial TCAD tools
• Working knowledge of CAD layout tools
• Understanding of semiconductor fabrication processes and process integration
• Understanding of semiconductor device characterization methods
• Design of experiments and data interpretation skills
• Excellent analytical and problem-solving skills
• Excellent communications/presentations skills