RFIC GaN Power Amplifier Engineer
About GlobalFoundries: GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.
About the role
The New College Graduate (PhD) candidate will provide radio frequency (RF) and/or wireless transmission design. Designs, plans and oversees installation and maintenance of wireless radio communications systems, including radio propagation modeling and prediction, microwave path analysis, interference analysis, frequency coordination, cell site equipment layout, parameter definition and ancillary equipment.
Responsibilities
- Design and simulate RF GaN power amplifiers for wireless and defense applications
- Perform electromagnetic (EM) modeling, circuit simulation, and layout of RFIC designs
- Characterize and validate power amplifier performance through bench testing and measurement
- Collaborate with cross-functional teams including process engineering, modeling, and applications to optimize PA performance
- Contribute to Intellectual Property by authoring innovative invention disclosures
- Contribute to publications and conference presentations with scientific results
- Understand application domains for GaN in the fields of Power Electronics and high frequency millimeter wave and RF applications
- Support technology transfer and design enablement for GaN RF platforms
- Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs
- Other duties as assigned by manager
- Write technical reports and prepare presentations
Qualifications
Required:
- Education: PhD in Electrical Engineering, Microelectronics, Physics, or related field
- Experience: Research experience in RF/microwave power amplifier design, GaN device physics, or RFIC design
- Skills: Fundamental knowledge of RF power amplifier design, GaN HEMT devices, EM simulation tools (e.g., ANSYS HFSS, ADS, Cadence), and RF measurement equipment
- Travel: Up to 10%
- Fluency in English Language – written & verbal
- May require obtaining a US Department of Defense Security Clearance; acceptance commits to applying for such if requested
Preferred:
- Post-doc candidates are welcome to apply
- Experience with GaN PA design for defense, 5G, or satellite communications
- Proficiency in Cadence Spectre, ADS, HFSS, or similar RF EDA tools
- Familiarity with load-pull measurements, large-signal modeling, and RF test equipment
- Project management skills – i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity
- Strong written and verbal communication skills
- Strong planning & organizational skills
Pay
Expected Salary Range $85,000.00 - $146,000.00. The exact Salary will be determined based on qualifications, experience and location.