RF Technology Development Device Engineer (2027 New College Graduate)

GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power-efficient, and high-performance solutions for high-growth markets. With global manufacturing operations across the U.S., Europe, and Asia, GF is a trusted and holistic technology partner for customers around the world.

About the role

GlobalFoundries' RF Technology Development Organization is seeking a Device and Integration Engineer to join our RF team in Essex Junction, VT. This role focuses on developing semiconductor technologies, including TCAD simulation, device design, electrical characterization, and analysis of SiGe HBT devices.

Responsibilities

• Conduct TCAD simulation, design, electrical characterization, and analysis of SiGe HBT devices.
• Perform theoretical studies or simulations to optimize device performance and benchmark against state-of-the-art technologies.
• Collaborate closely with the process integration team for device fabrication.
• Establish new technology design rules, test structures, and test methodologies.
• Responsible for DC and RF characterization and analysis, including high-power measurements, s-parameter, and load-pull.
• Own and drive technical process problem-solving and data analysis.
• Interact with internal and external customers to respond to technical queries.
• Innovate new methods for continuous process and device improvement.
• Perform all activities in a safe and responsible manner, supporting Environmental, Health, Safety, and Security requirements.

Requirements

• Graduating with a Master’s or PhD in Electrical Engineering, Materials Science, or another relevant engineering or physical science discipline from an accredited program.
• Research background in CMOS, III-V, or memory device physics, semiconductor processing, and characterization.
• Strong data analysis skills and excellent interpersonal, oral, and written communication skills.
• Minimum overall GPA of 3.0 and proven good academic standing.
• Fluency in English (written and verbal).

Preferred Qualifications

• Research experience in Silicon or SiGe BiCMOS FEOL/BEOL processing and/or semiconductor process development.
• Experience in RF device design and characterization, including high-frequency design, measurement, and analysis.
• Proficiency with Cadence or other layout and simulation tools.
• Prior related internship or co-op experience.
• Demonstrated leadership experience in workplace, school projects, competitions, or similar.
• Project management skills, including the ability to innovate and execute solutions in ambiguous environments.
• Strong planning and organizational skills.

Pay

Expected salary range: $85,000.00 – $146,000.00. The exact salary will be determined based on qualifications, experience, and location.