Dry/Plasma Etch GaN Process Development Engineer (SM1)

About the role

We are seeking a highly motivated Advanced GaN Process Development Engineer to join our Plasma Etch Process Development team. The engineer will develop, optimize, and transfer advanced plasma etch processes for next‑generation GaN semiconductor technologies, working closely with integration, equipment, metrology, and manufacturing teams to drive innovation, improve process capability, and enable high‑volume manufacturing.

Responsibilities

• Process Development
  • Develop and optimize plasma etch processes for advanced semiconductor devices.
  • Design and execute experiments (DOE) to improve critical process metrics, including etch rate, selectivity, critical dimension (CD) control, profile control, defectivity, and uniformity.
  • Characterize process performance and establish process windows for manufacturing robustness.
  • Evaluate new process chemistries, hardware configurations, and chamber technologies.
• Technology Introduction Support
  • Support development and qualification of next‑generation etch technologies.
  • Collaborate with device integration teams to meet product and technology requirements.
  • Drive process readiness for technology transfers from development into manufacturing.
  • Establish process specifications, control plans, and release documentation.
• Tool and Equipment Engineering
  • Partner with equipment engineering teams to improve tool capability, productivity, and reliability.
  • Lead chamber matching, equipment qualification, and process performance improvement activities.
  • Support installation and startup of new etch platforms.
• Data Analysis & Continuous Improvement
  • Analyze complex process datasets using statistical methods and data analytics tools.
  • Identify root causes of process excursions and implement corrective actions.
  • Lead yield improvement and defect reduction initiatives.
  • Utilize SPC methodologies to monitor and improve process stability.
• Cross‑Functional Collaboration
  • Work closely with Process Integration, Manufacturing, Yield Engineering, Metrology, Equipment Engineering, and Quality & Reliability teams.
  • Present technical findings and recommendations to management and key stakeholders.
  • Mentor junior engineers and technicians as needed.

Qualifications

Minimum requirements

• 5+ years of semiconductor plasma/dry etch process development experience.
• Bachelor’s degree in an engineering, science, or related STEM discipline.
• Strong foundation in statistical process control, engineering change control, and process release strategies.
• Experience with DOE methodologies and statistical analysis.
• Familiarity with metrology techniques including SEM, CD‑SEM, ellipsometry, and defect inspection tools.

Preferred qualifications

• Experience in Gallium Nitride (GaN) and/or similar wide‑bandgap III‑V nitrides processes and technology development.
• Proficiency with Python, Claude, or other AI models/tools is a plus.
• Demonstrated strong analytical and problem‑solving skills resulting in innovative process solutions.
• Experience with process development and transfer on etch platforms (LAM, AMAT, TEL, etc.).
• Strong verbal and written communication skills.
• Ability to work effectively in cross‑functional teams and fast‑paced environments.
• Excellent time‑management and project‑delivery capabilities.
• Proven ability to build influential relationships and drive results.

About Texas Instruments

Texas Instruments Incorporated (Nasdaq: TXN) is a global semiconductor company that designs, manufactures, and sells analog and embedded processing chips for markets such as industrial, automotive, data center, personal electronics, and communications equipment. Our mission is to create a better world by making electronics more affordable through innovative semiconductor solutions.

Benefits

We offer competitive pay and a comprehensive benefits package designed to help you and your family live your best life. Our benefits support your well‑being and professional growth.