CLAWS III-N Power Integration Engineer

About the role

The CLAWS III-N Power Integration Engineer will contribute to the development of next-generation power semiconductor devices, focusing on GaN power devices (HEMTs, Diodes, lateral/vertical FETs).

Responsibilities

• Design and optimize GaN power devices (HEMTs, Diodes, lateral/vertical FETs) for high-voltage and high-frequency applications.

• Utilize TCAD simulation (e.g., Synopsys, Silvaco, etc.) for process and device modeling, electrical characteristics prediction, and performance enhancement.

• Develop and refine device layouts for wafer fabrication, ensuring manufacturability and reliability.

• Work to define and optimize GaN-on GaN, GaN-on-Si, GaN-on-SiC, and other heteroepitaxial structures for power applications.

• Lead the wafer process flow development, including epi structures, etching, metallization, and passivation steps.

• Troubleshoot process integration challenges related to defectivity, yield, and reliability.

• Define and execute device characterization plans (IV, CV, breakdown, leakage, switching performance).

• Analyze reliability metrics such as TDDB, HTRB, HTOL, and step-stress testing to assess long-term device stability.

• Interface with packaging and application engineers to optimize thermal management and electrical performance in real-world applications.

• Work with process engineers and R&D partners to drive technology improvements.

• Collaborate with circuit designers, applications engineers, and product development teams to translate device-level improvements into system-level advantages.

• Stay up to date with emerging GaN technology trends, competitive landscape, and industry benchmarks.

Qualifications

• Ph.D. or M.S. in Electrical Engineering, Materials Science, or a related field with a focus on power semiconductor devices.

• 3+ years of experience in GaN power device design and process integration (industry or research).

• A track record of publications in high-quality journals and/or conferences.

• Experience characterizing high-power semiconductor devices and extracting relevant device parameters.

• Excellent communication and interpersonal skills.

• Ability to multitask and meet deadlines with moderate supervision.

• Ability to follow safe procedures for working with semiconductor fabrication equipment, chemicals, and compressed gas cylinders.

• Comfort in collaborating with students, faculty, and staff of varying experience and backgrounds.

• Strong background in semiconductor physics, TCAD simulation, and electrical characterization.

• Hands-on experience with semiconductor process integration, fabrication, and failure analysis.

• Familiarity with GaN E-mode, D-mode, lateral vs. vertical device structures, and reliability challenges.